2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements. 2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C
1996. 1. 28 1/3 semiconductor technical data kn3904 epitaxial planar npn transistor revision no : 0 general purpose application. switching application. The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications.    It is designed for low current and power , medium voltage , and can operate at moderately high speeds. Schematic of very Simple preamplifiers using 2N3904. In electronics, a common emitter amplifier is used as a voltage amplifier. In this circuit the base terminal of the transistor serves as the input, the collector is the output, and the emitter is common. Apollo hospital chennai greams road doctor list
NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published.
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tran 2n3904 npn 60v 200ma gen purp to92 Dec 23, 2008 · Now you understand there are tremendous different result between the 2N3904 transistor datasheet and my test circuit, this is because the 2N3904 datasheet is measured using the PWM (Pulse Width Modulation) with period for about 300 us (micro second) and duty cycle for about 2%, the reason to use this very short pulse period method in the ... Application for name correction in company2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements. NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted
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DATA SHEET Product speciﬁcation Supersedes data of 1999 Apr 23 2004 Oct 28 DISCRETE SEMICONDUCTORS 2N5550; 2N5551 NPN high-voltage transistors book, halfpage 2N3906 datasheet, 2N3906 datasheets, 2N3906 pdf, 2N3906 circuit : ONSEMI - General Purpose Transistors(PNP Silicon) ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Coach kelsey large
2N3905 Datasheet (PDF) 1.1. 2n3905 2n3906.pdf Size:199K _motorola. MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905 PNP Silicon * 2N3906 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 2904, STYLE 1 CollectorEmitter Voltage VCEO 40 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 40 ... Data Sheet (current) [683 KB ] ST MICRO [69 KB ] ... TRANSISTOR, 2N3904, NPN GENERAL PURPOSE, SMALL SIGNAL, 40V, TO-92 For more about Transistors, click here.
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